This is the result of anisotropic processing to form a diffraction grating with a mask width of 100 nm and depth of 75 nm. An etching rate of 50 nm/min has been obtained. The mask is SiO?.
ProcessesFormation of diffraction gratings for InP lasers
This is the result of anisotropic processing to form a diffraction grating with a mask width of 100 nm and depth of 75 nm. An etching rate of 50 nm/min has been obtained. The mask is SiO?.