5 Layer Al Wiring
Defect analysis of exposed 5-layer Al wiring by CCP RIE system.
The removal of the silicon nitride film (SiN) as a passivation film and the silicon oxide film (SiO?) as an interlayer insulator has been achieved while leaving the Al wiring.
In addition to the above, we have performed processes to suppress polyimide residues, removal of low-k organic silicon interlayer insulation, sequential removal of multilayer Al interconnects, high selectivity processes for Poly-Si and TiN, exposure of tungsten plugs, and resin opening (decapping). In addition, we have a lineup of equipment for defect analysis, including a desktop type small RIE system, a parallel flat plate type RIE system for �300mm, and an ICP etching system equipped with an electrostatic chuck (ESC) and a cooling mechanism by He. We can propose a wide range of solutions and optimal equipment according to customer needs.